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Strong electric field driven carrier transport non-linearities in n-type GaAs/AlGaAs superlattices

: Subacius, L.; Venckevicius, R.; Kasalynas, I.; Seliuta, D.; Valusis, G.; Schmidt, J.; Lisauskas, A.; Roskos, H.G.; Alekseev, K.; Köhler, K.

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Acta physica Polonica. A, General physics, physics of condensed matter, optics and quantum electronics, atomic and molecular physics, applied physics 119 (2011), Nr.2, S.167-169
ISSN: 0587-4246
ISSN: 0587-4284
International Symposium Ultrafast Phenomena in Semiconductors (UFPS) <14, 2010, Vilnius>
Zeitschriftenaufsatz, Konferenzbeitrag, Elektronische Publikation
Fraunhofer IAF ()

Nanosecond pulsed technique was used to study and discriminate strong electric field induced effects in carrier transport in silicon doped GaAs/Al(0.3)Ga(0.7)As superlattices at room temperature. The experiment shows that the superlattice can serve as gain media to employ parametric phenomena for microwave amplification.