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Experimental demonstration of efficient pulsed terahertz emission from a stacked GaAs/AlGaAs p-i-n-i heterostructure

 
: Lisauskas, A.; Reklaitis, A.; Venckevicius, R.; Kasalynas, I.; Valusis, G.; Grigaliunaite-Vonseviciene, G.; Maestre, H.; Schmidt, J.; Blank, V.; Thomson, M.D.; Roskos, H.G.; Köhler, K.

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Applied Physics Letters 98 (2011), Nr.9, Art. 091103, 3 S.
ISSN: 0003-6951
ISSN: 1077-3118
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()

Abstract
The pulsed optoelectronic terahertz emitter based on a d-doped p-i-n-i GaAs/Al(x)Ga(1-x)As heterostructure, which was suggested by Reklaitis [ Phys. Rev. B 77, 153309 (2008)] , is investigated experimentally. It is shown that the heterostructure can serve as efficient antenna- and bias-free surface emitter. Its power exceeds the emission from InGaAs and InAs surfaces for optical excitation fluences below 0.7 µJ/cm(2) at 82 MHz pulse repetition rate, respectively, 7 µJ/cm(2) at 1 kHz, with potential for further improvement by carrier recombination management.

: http://publica.fraunhofer.de/dokumente/N-154670.html