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Continuous-wave room-temperature operation of a 2.8 µm GaSb-based semiconductor disk laser

: Rösener, B.; Rattunde, M.; Moser, R.; Kaspar, S.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.


Optics Letters 36 (2011), Nr.3, S.319-321
ISSN: 0146-9592
Fraunhofer IAF ()

We demonstrate an optically pumped semiconductor disk laser based on the (AlGaIn)(AsSb) material system, which operates at an emission wavelength of 2:8 µm. Up to 120 mW of output power were obtained in cw operation and more than 500 mW in pulsed mode. The performance of the present laser is discussed in comparison to shorter-wavelength semiconductor disk lasers based on the same materials system.