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InP-based heterojunction bipolar transistors with InGaAs/GaAs strained-layer-superlattice

: Driad, R.; Aidam, R.; Yang, Q.K.; Maier, M.; Güllich, H.; Schlechtweg, M.; Ambacher, O.


Applied Physics Letters 98 (2011), Nr.4, Art. 043503, 3 S.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
ISSN: 1931-9401 (online)
Fraunhofer IAF ()

In this paper, we report the design, fabrication, and characterization of an InP/InGaAs heterojunction bipolar transistor (HBT) employing a lattice-mismatched In(0.53)Ga(0.47)As/GaAs strained-layer-superlattice (SLS) base structure. The performance of the SLS-base device is also compared with that of an In(0.53)Ga(0.47)As uniform-base structure. The digitally graded-base devices exhibit a slightly lower gain at low bias voltage and a higher current gain at high currents. While the offset voltage remains comparable in the two structures, the graded-base InP/InGaAs HBTs, with built-in fields of - 66 kV/cm, have typically a maximum dc current gain of 18% larger than that of transistors with uniform base.