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Development and evaluation of AuSi eutectic wafer bonding
|IEEE Electron Devices Society:|
TRANSDUCERS 2009 : International Solid-State Sensors, Actuators and Microsystems Conference; 21 - 25 June 2009, Denver
Piscataway, NJ: IEEE, 2009
ISBN: 978-1-4244-4193-8 (online)
ISBN: 978-1-4244-4190-7 (print)
|International Conference on Solid-State Sensors, Actuators, and Microsystems <15, 2009, Denver>|
|Fraunhofer ENAS ()|
In this paper, wafer-to-wafer AuSi eutectic bonding was investigated and evaluated with various sets of experimental parameters. Single crystalline Si and amorphous Si were bonded with different dimension Au layers and observed by optical measurements. Material composition, adhesion layer, electrical insulation, bonding parameters, and surface pre-treatments were discussed and have improved bonding performance. Bond strength determined by micro-chevron-test and shear test was evaluated as well as hermeticity. High bond yield was achieved with 4 inch and 6 inch wafer stacks.