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BEOL embedded RF-MEMS switch for mm-wave applications

: Kaynak, M.; Ehwald, K.-E.; Drews, J.; Scholz, R.; Korndorfer, F.; Knoll, D.; Tillack, B.; Barth, R.; Birkholz, M.; Schulz, K.; Sun, Y.M.; Wolansky, D.; Leidich, S.; Kurth, S.; Gurbuz, Y.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
IEEE International Electron Devices Meeting, IEDM 2009 : Baltimore, Maryland, USA, 7 - 9 December 2009
Piscataway/NJ: IEEE, 2009
ISBN: 978-1-4244-5639-0
ISBN: 978-1-4244-5640-6
4 S.
International Electron Devices Meeting (IEDM) <2009, Baltimore/Md.>
Fraunhofer ENAS ()

We demonstrate for the first time the embedded integration of a Radio Frequency Microelectromechanical Systems (RF-MEMS) capacitive switch for mm-wave integrated circuits in a BiCMOS Back-end-of-line (BEOL). The switch shows state-of-the-art performance parameters. The ¿off¿ to ¿on¿ capacitance ratio is 1:10 providing excellent isolation in the mm-wave frequency range. Insertion loss and isolation are found to fall below 1.65 dB and to exceed 15 dB, respectively, in the frequency range of 60 GHz to 110 GHz. Feasibility of switch integration into single chip RF designs is demonstrated for a dual-band voltage controlled oscillator (VCO). No performance degradation was observed after ten billion hot-switching cycles.