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Dielectric layers suitable for high voltage integrated trench capacitors

Dielektrische Schichten für hochspannungstaugliche integrierte Grabenkondensatoren
: Dorp, J. vom; Erlbacher, T.; Bauer, A.J.; Ryssel, H.; Frey, L.

Postprint urn:nbn:de:0011-n-1513315 (868 KByte PDF)
MD5 Fingerprint: 494adaa1866f4aa5fe2141a83bcc4494
Copyright AIP
Erstellt am: 28.1.2011

Journal of vacuum science and technology B. Microelectronics and nanometer structures 29 (2011), Nr.1, Art. 01AB04, 6 S.
ISSN: 0734-211X
ISSN: 1071-1023
ISSN: 2166-2746
ISSN: 2166-2754
Workshop on Dielectrics in Microelectronics (WoDiM) <16, 2010, Bratislava>
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IISB ()
high voltage capacitors; integrated capacitors; monolithic integration of passives; trench capacitors

In this work, two different dielectric stacks consisting of silicon dioxide (SiO2) and silicon nitride (Si3N4) are analyzed regarding their suitability as dielectrics in a high voltage trench capacitor. The processing of the dielectric layers and the resulting edge-coverage in the trench holes are described. Voltage and temperature dependence of the trench capacitance are analyzed and compared with planar capacitors for reference. The leakage currents are measured and the current transport mechanisms are analyzed. The outstanding properties of the devices are a high capacitance per area (1.25 nF/mm2 for SiO2 and 1.5 nF/mm2 for Si3N4), a low temperature coefficient (SiO2: 18 ppm/K; Si3N4: 85 ppm/K from 25100 °C), and a low leakage current (<1x10−6 A) for voltages up to 400 V for Si3N 4.