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NMOS logic circuits using 4H-SiC MOSFETs for high temperature applications

: Le-Huu, M.; Schrey, F.F.; Grieb, M.; Schmitt, H.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.


Bauer, A.J.; Friedrichs, P.; Krieger, M.; Pensl, G.; Rupp, R.; Seyller, T.:
Silicon carbide and related materials 2009 : Selected, peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nürnberg, Germany, October 11 - 16, 2009
Stafa-Zürich: Trans Tech Publications, 2010 (Materials Science Forum 645/648)
ISBN: 978-0-87849-279-4
ISBN: 0-87849-279-8
International Conference on Silicon Carbide and Related Materials (ICSCRM) <13, 2009, Nürnberg>
Fraunhofer IISB ()
NMOS; high temperature electronic; logic gates; MOS reliability; TDDB

Normally-off 4H-SiC MOSFETs are used to build NMOS logic gates intended for high temperature operation. The logic gates are characterized between 25°C and 500°C. Stable gate operation for more than 200h at 400°C in air is demonstrated. The excellent MOS reliability is quantified using I-V curves to dielectric breakdown and constant voltage stress to breakdown at 400°C. Although the effective tunneling barrier height fB for electrons lowers to 2eV at 400°C, the extrapolated lifetime from constant voltage stress to breakdown measurements is longer than 105h at 400°C for typical logic gate operating field strength of 2MV/cm.