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Polarization switching of the optical gain in semipolar InGaN quantum wells

: Scheibenzuber, W.; Schwarz, U.T.


Physica status solidi. B 248 (2011), Nr.3, S.647-651
ISSN: 0031-8957
ISSN: 0370-1972
Fraunhofer IAF ()
GaN; InGaN; semiconductor laser; semipolar planes; quantum well

We investigate the influence of polarization switching on the optical gain of semipolar InGaN quantum wells (QWs)
depending on indium content and charge carrier concentration using self-consistent 6\'016 k\'02p-band structure calculations. The semipolar planes considered here are the (1122)- and the (2021)-plane. In contrast to the (2021)-plane, the dominant polarization of the optical gain in aQWon the (1122)-plane can depend on both the indium content and the charge carrier concentration, as reported from experiments. These effects are explained by a detailed analysis of the wave function composition of the topmost valence bands in a semipolar QW.