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Dynamic lock-in thermography for operation mode-dependent thermally active fault localization

 
: Schlangen, R.; Deslandes, H.; Lundquist, T.; Schmidt, C.; Altmann, F.; Yu, K.; Andreasyan, A.; Li, S.

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21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2010 : Held in Montecassino Abbey and Gaeta, Italy, from 11th until 15th October 2010
Amsterdam: Elsevier, 2010 (Microelectronics reliability 50.2010, Nr.9-11)
ISSN: 0026-2714
S.1454-1458
European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF) <21, 2010, Gaeta/Italy>
Englisch
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer IWM ()

Abstract
Microscopic Lock-In Thermography (LIT) has proven unsurpassed capability for non-destructive localization of thermally active defects like shorts or resistive opens, even through the full package. This paper briefly reviews the real-time pixel-wise lock-in methodology, as the key to the extreme temperature sensitivity. A typical LIT work-now is demonstrated whereby the main focus of the paper is to discuss and demonstrate different ways how to activate the thermally active defects with more complex DUTs/defect signatures, requiring ATE docking.

: http://publica.fraunhofer.de/dokumente/N-146479.html