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AlGaN/GaN HEMTs for high voltage applications

: Benkhelifa, F.; Krausse, D.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O.

European Space Agency -ESA-, Paris:
5th Space Agency -MOD Round Table Workshop on GaN Component Technologies, ESAMOD 2010 : Netherlands, 2 - 3 September 2010
Noordwijk: ESA Publications Division, 2010
4 S.
Round Table Workshop on GaN Component Technologies <5, 2010, Noordwijk>
Fraunhofer IAF ()

In this paper, we report on the development of normally-on high electron mobility transistors (HEMTs) based on AlGaN/GaN semiconductors, on semi-insulating SiC and Si substrates for high voltage applications (U = 100 - 600 V). Transistors with a total gate periphery of 240 mm achieve a breakdown voltage of 600 V and 120 V, for a device with a gate drain distance of 15 µm and 4 µm, respectively. A maximum drain current of 54 A measured for a corresponding gate source voltage of 2 V. The Schottky gate supports a bias of + 5 V and the drain current is greater than 83 A. Breakdown voltage mapping of the large transistors, across the 3" SiC substrate, and also from wafer to wafer, shows a yield > 65 %, reflecting the uniformity of the process for the large area high voltage devices.