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On the influence of flash peak temperature variations on Schottky contact resistances of 6-T SRAM cells

: Kampen, C.; Burenkov, A.; Lorenz, J.


Institute of Electrical and Electronics Engineers -IEEE-:
European Solid-State Device Research Conference, ESSDERC 2010. Proceedings : 14-16 Sept. 2010, Sevilla, Spain
New York, NY: IEEE, 2010
ISBN: 978-1-4244-6658-0
ISBN: 978-1-4244-6661-0
ISBN: 978-1-4244-6660-3 (CD-ROM)
European Solid-State Device Research Conference (ESSDERC) <40, 2010, Seville>
European Solid-State Circuits Conference (ESSCIRC) <36, 2010, Seville>
Fraunhofer IISB ()
CMOS; TCAD; SPICE; contact resistance; RTP; annealing; variability

The influence of temperature variations during flash annealing on contact resistances in 6-T SRAM cells was studied. TCAD simulations of 32 nm single gate FD SOI devices were carried out. The active regions of a 6-T SRAM cell were simulated by 3D process simulations to calculate the Schottky contact resistances. A coupled spike and flash annealing scheme was used to anneal the devices. Flash annealing temperature fluctuations were modeled in TCAD simulations and the resulting contact resistance values were calculated. SPICE parameters of the FD SOI devices were extracted and used in circuit simulations. The dependence of contact resistances on temperature fluctuations were taken into account in the SPICE simulation by analytical models.