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2010
Conference Paper
Titel
Optical investigation of the BGaP/GaP/Si material system
Abstract
The BGaAsP/GaP material system has lately gained interest for monolithic integration of III/V-based diode lasers in Si-based micro- und nano-electronic circuits. The design of efficient laser structures requires the knowledge of the band structure and of the optical properties - such as band-gap energies and refractive index which are both composition dependent. The boron content of the present MOVPE grown BGaP layers was determined by X-ray diffraction and Raman spectroscopy. Spectroscopic ellipsometry was used to study the dielectric function of pseudomorphically strained B(x)Ga(1-x)P grown on Si. Characteristic differences in the dielectric function spectra will be discussed.
Author(s)