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Design and realization of GaN RF-devices and circuits from 1 to 30 GHz

 
: Kühn, J.; Musser, M.; Raay, F. van; Kiefer, R.; Seelmann-Eggebert, M.; Mikulla, M.; Quay, R.; Rödle, T.; Ambacher, O.

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International journal of microwave and wireless technologies 2 (2010), Nr.1, S.115-120
ISSN: 1759-0795
ISSN: 1759-0787
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
gallium nitride; power amplifier; power-added efficiency; MMIC; broadband; LNA; mm-wave

Abstract
The design, realization, and characterization of highly efficient powerbars and monolithic microwave integrated circuit (MMIC) high-power amplifiers (HPAs) with AlGaN/GaN high electronic mobility transistors (HEMTs) are presented for the frequency range between 1 and 30 GHz. Packaged powerbars for the frequency range between 1 and 6 GHz have been developed based on a process called GaN50 with a gate length of 0.5 mm. Based on a GaN25 process with a gate length of 0.25 mm, high-power MMIC amplifiers are presented starting from 6 GHz up to advanced X-band amplifiers and robust LNAs in microstrip transmission line technology.

: http://publica.fraunhofer.de/dokumente/N-145671.html