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A metamorphic HEMT S-MMIC amplifier with 16.1 dB gain at 460 GHz

 
: Tessmann, A.; Leuther, A.; Lösch, R.; Seelmann-Eggebert, M.; Massler, H.

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Institute of Electrical and Electronics Engineers -IEEE-:
IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 : CSICS: Back in the Bay, Monterey, CA, 3-6 October 2010, Technical digest
Piscataway/NJ: IEEE, 2010
ISBN: 978-1-4244-7437-0
ISBN: 978-1-4244-7436-3
S.245 248
Compound Semiconductor Integrated Circuit Symposium (CSICS) <32, 2010, Monterey/Calif.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
grounded coplanar waveguide; low-noise amplifier (LNA); submillimeter-wave monolithic integrated circuit

Abstract
In this paper, we present a four-stage submillimeterwave monolithic integrated circuit (S-MMIC) amplifier for use in next generation radar and communication systems operating in the WR-2.2 waveguide band (325 - 500 GHz). The low-noise amplifier circuit (LNA) has been realized using a 35 nm InAlAs/InGaAs based metamorphic high electron mobility transistor (mHEMT) technology and demonstrates a peak gain of 16.1 dB at 460 GHz and a small-signal gain of more than 13 dB in the bandwidth from 433 to 465 GHz. The use of grounded coplanar waveguide (GCPW) topology in combination with a very compact design resulted in a die size of only 0.37 × 0.63 mm2.

: http://publica.fraunhofer.de/dokumente/N-145670.html