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High conversion gain flip-chip integrated photoreceivers for broad-band (40 Gbit/s) and narrow-band (10 GHz) applications

Flip-Chip aufgebaute Photoempfänger für Breitband- (40 Gbit/s) und Nahband- (10 GHz) Anwendungen mit hohem Konversionsgewinn
 
: Sohn, J.; Leven, A.; Hurm, V.; Walcher, H.; Benz, W.; Ludwig, M.; Kuri, M.; Massler, H.; Bronner, W.; Hülsmann, A.; Köhler, K.; Rosenzweig, J.; Schlechtweg, M.

Berroth, M.:
Second Joint Symposium on Opto- and Microelectronic Devices and Circuits 2002. Digest : March 10-16, 2002, Stuttgart, Germany
Stuttgart, 2002
S.53-56
Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC) <2, 2002, Stuttgart>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
photoreceiver; Photoempfänger; waveguide photodiode; Wellenleiterphotodiode; flip-chip mounting; Flip-Chip-Montage

Abstract
High conversion gain photoreceivers for broad-band (40 Gbit/s) and narrow-band (10 GHz) applications were manufactured using GaAs-based pseudomorphic HEMT (pHEMT) amplifiers. The photoreceivers include flip-chip mounted side illuminated multi-mode waveguide photodiodes on InP substrate. Using the waveguide photodiode which has high responsivity, high gain of the photoreceivers has been achieved.

: http://publica.fraunhofer.de/dokumente/N-14550.html