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Optical anisotropy in semipolar (Al,In)GaN laser waveguides

 
: Scheibenzuber, W.; Schwarz, U.T.; Veprek, R.; Witzigmann, B.; Hangleiter, A.

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Physica status solidi. C 7 (2010), Nr.7-8, S.1925-1927
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
International Conference on Nitride Semiconductors (ICNS) <8, 2009, Jeju/Korea>
Englisch
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer IAF ()
optical property; waveguide; laser; (Al,In)GaN

Abstract
In this work, the optical eigenmodes of a semipolar (Al,In)GaN laser diode are calculated. A full vectorial one-dimensional 4×4 transfer matrix method is used to correctly incorporate the influence of birefringence of the wurtzite crystal. Depending on the orientation of the laser waveguide relative to the c-axis, the eigenmodes show TE/TM- or extraordinary/ordinary polarization. The polarization direction of the eigenmodes is crucial for the performance of the laser, as it determines the relevant interband matrix elements for the optical gain.

: http://publica.fraunhofer.de/dokumente/N-145081.html