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Bias-dependent absorption coefficient of the absorber section in GaN-based multisection laser diodes

Spannungsabhängiger Absorptionskoeffizient der Absorbersektion in GaN-basierten Mehrsegment-Laserdioden
 
: Scheibenzuber, W.; Schwarz, U.T.; Sulmoni, L.; Carlin, J.F.; Castiglia, A.; Grandjean, N.

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Applied Physics Letters 97 (2010), Nr.18, Art. 181103, 3 S.
ISSN: 0003-6951
ISSN: 1077-3118
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
GaN; laser diode; multisection; short pulse; absorption; Laserdiode; Mehrsegment; Kurzpuls; Absorption

Abstract
We measure the modal absorption coefficient of the InGaN quantum wells (QWs) in the absorber section of (Al,In)GaN multisection laser diodes as a function of bias voltage and photon energy using optical gain-spectroscopy. In the examined laser diodes, the modal absorption at the laser wavelength of 430 nm has a maximum of 270 cm(-1) at low negative bias and decreases with increasing negative bias. We explain this behavior by comparing the measurements to absorption coefficients calculated from a band-edge profile simulation. The decrease of the absorption at large negative bias is caused by a shift in the transition energies in the quantum wells due to the quantum confined Stark effect.

: http://publica.fraunhofer.de/dokumente/N-145080.html