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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. Determination of suitable mHEMT transistor dimensioning for power amplification at 210 GHz by comprehensive measurements
| 5th European Microwave Integrated Circuits Conference, EuMIC 2010. Proceedings : 27-28 September 2010, Paris, France, European Microwave Week 2010 London: Horizon House, 2010 ISBN: 978-2-87487-017-0 ISBN: 978-1-424-47231-4 S.78-81 |
| European Microwave Integrated Circuits Conference (EuMIC) <5, 2010, Paris> European Microwave Week <2010, Paris> |
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| Englisch |
| Konferenzbeitrag |
| Fraunhofer IAF () |
| MMIC; millimeter wave; power amplifier; MHEMT; technology comparison |
Abstract
The properties of various mHEMT technologies and their advantages for millimeter-wave (mmW) power amplification are presented. An experimental determination of the most suitable transistor technology (i.e. gate-length), transistor size (i.e. number of gate-fingers and gate-width) and transistor bias is taken. The advantages of the different technologies are pointed out. The most suitable combination of gate-length, number of fingers, gate-width and bias for obtaining maximum gain, maximum output power and maximum power added efficiency at a given frequency of 210 GHz is determined.