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Determination of suitable mHEMT transistor dimensioning for power amplification at 210 GHz by comprehensive measurements

 
: Diebold, S.; Kallfass, I.; Massler, H.; Leuther, A.; Tessmann, A.; Pahl, P.; Koch, S.; Siegel, M.; Ambacher, O.

5th European Microwave Integrated Circuits Conference, EuMIC 2010. Proceedings : 27-28 September 2010, Paris, France, European Microwave Week 2010
London: Horizon House, 2010
ISBN: 978-2-87487-017-0
ISBN: 978-1-424-47231-4
S.78-81
European Microwave Integrated Circuits Conference (EuMIC) <5, 2010, Paris>
European Microwave Week <2010, Paris>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
MMIC; millimeter wave; power amplifier; MHEMT; technology comparison

Abstract
The properties of various mHEMT technologies and their advantages for millimeter-wave (mmW) power amplification are presented. An experimental determination of the most suitable transistor technology (i.e. gate-length), transistor size (i.e. number of gate-fingers and gate-width) and transistor bias is taken. The advantages of the different technologies are pointed out. The most suitable combination of gate-length, number of fingers, gate-width and bias for obtaining maximum gain, maximum output power and maximum power added efficiency at a given frequency of 210 GHz is determined.

: http://publica.fraunhofer.de/dokumente/N-144928.html