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Preparation and thermoelectric characterization of SiC-B4C composites

: Lankau, V.; Martin, H.-P.; Hempel-Weber, R.; Oeschler, N.; Michaelis, A.


Journal of Electronic Materials 39 (2010), Nr.9, S.1809-1813
ISSN: 0361-5235
ISSN: 1543-186X
European Conference on Thermoelectrics (ECT) <7, 2009, Freiburg>
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer IKTS ()

SiC-B4C composites with various values of SiC-to-B4C ratio and grain size were fabricated by pressureless sintering. This paper presents the results of current investigations of this composite material. This includes the parameters of manufacture (shrinkage, density, and open porosity), thermoelectric properties (electrical and thermal conductivity, and thermopower), and material characterization (x-ray diffraction, scanning electron microscopy, oxidation resistance, and thermal expansion). The results indicate high potential of this composite as an alternative material for thermoelectric applications at high temperatures. The Seebeck coefficient of the composite was higher than that of the single-component materials B4C and SiC and reached 400 mu V/K at 500 degrees C.