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The influence of annealing on the passivation quality of A-SiCX:H on crystalline silicon and germanium surfaces

: Suwito, D.; Fernandez, J.; Janz, S.; Dimroth, F.; Glunz, S.W.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
34th IEEE Photovoltaic Specialists Conference, PVSC 2009. Vol.1 : Philadelphia, Pennsylvania, USA, 7 - 12 June 2009
Piscataway/NJ: IEEE, 2009
ISBN: 978-1-4244-2949-3
ISBN: 1-4244-2949-8
ISBN: 978-1-4244-2950-9
Photovoltaic Specialists Conference (PVSC) <34, 2009, Philadelphia/Pa.>
Fraunhofer ISE ()

This paper is addressed to the surface passivation of c-Si and c-Ge wafers by plasma enhanced chemical vapor deposition (PECVD) of Si-rich a-SiCx. We report upon excellent effective lifetimes on 1 ¿cm CZ p-Ge substrates exceeding 400 ¿s after an annealing step of 450°C. The comparison of the thermal stability of the passivation quality on the respective substrates reveals experimentally, that contrary to the system c-Si/a-SiCx, hydrogen plays a minor role in the electrical passivation of c-Ge surfaces by a-SiCx. This phenomenon is discussed considering the different work functions and band gaps of the respective materials and different possibilities for the role of carbon in the passivating matrix are outlined.