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Quasi-steady-state photoconductance measurements on crystalline silicon thin-film material

: Rosenits, P.; Kopp, F.; Roth, T.; Warta, W.; Reber, S.; Glunz, S.W.

Volltext urn:nbn:de:0011-n-1436006 (365 KByte PDF)
MD5 Fingerprint: 5cd331984ea8345a9579791df1372f4c
Erstellt am: 31.8.2012

Sinke, W. ; WIP - Renewable Energies, München; European Commission; UNESCO; World Council for Renewable Energy; International Photovoltaic Equipment Association:
24th European Photovoltaic Solar Energy Conference 2009. CD-ROM : The compiled State-of-the-Art of PV Solar Technology and Deployment. Proceedings of the International Conference held in Hamburg, 21-25 September 2009
München, 2009
ISBN: 3-936338-25-6
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <24, 2009, Hamburg>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

In this contribution, a method to determine the excess carrier lifetime epi in the electrically active epitaxial layer of crystalline silicon thin-film material is presented. The concept is based on the determination of the emitter saturation current density J0e by means of quasi-steady-state photoconductance measurements of thin-film lifetime samples with different epitaxial layer thicknesses. An increasing J0e with increasing epitaxial layer thickness is expected. In principle, also quantitative results regarding epi can be made. First measurements on microelectronicgrade and solar-grade crystalline thin-film material are presented in this work.