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Industrial sputtering metallization technology for crystalline silicon solar cells

: Reinwand, D.; Nekarda, J.; Grohe, A.; Hartmann, P.; Trassl, R.; Preu, R.

Volltext urn:nbn:de:0011-n-1435939 (260 KByte PDF)
MD5 Fingerprint: 1e222653573abd1841f4082045216c6e
Erstellt am: 18.8.2012

Sinke, W. ; WIP - Renewable Energies, München; European Commission; UNESCO; World Council for Renewable Energy; International Photovoltaic Equipment Association:
24th European Photovoltaic Solar Energy Conference 2009. CD-ROM : The compiled State-of-the-Art of PV Solar Technology and Deployment. Proceedings of the International Conference held in Hamburg, 21-25 September 2009
München, 2009
ISBN: 3-936338-25-6
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <24, 2009, Hamburg>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

In this paper first results on the stability and applicability for an inline sputtering pilot system (Applied Materials ATON 500 Ev + Sp) with industrially feasible deposition rates are shown. The system consists of two different process chambers, one for thermal evaporation and a second one for sputter deposition of two different metals. The applicability of the sputtering process for the front side metallization has first been determined in an experimental setup on a non PV dedicated system. Different experiments were performed to evaluate the properties of the sputtered layers. To determine the possible damage of the passivation layer during the sputter deposition, test structures for minority carrier lifetime measurements were prepared. The layer growth of the sputtered metal depends on the temperature of the substrate and the sputtered target material properties as well. To determine the layer growth and the homogeneity, experiments were performed to evaluate the sheet resistance and to identify their relation to an industrial inline metallization process with various deposition rates after transferring the process to the pilot system. Sheet resistance measurements are additionally used to analyze a very important aspect of the metallization process, the silicide formation. Depending on the applied metal for the deposited layer, the time and temperature of the tempering process has to be chosen individually in order to from a suitable silicide layer for subsequent contact formation.