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A 4-Watt X-Band compact coplanar high power amplifier MMIC with 18-dB Gain and 25-% PAE

Kompakter koplanarer 4-Watt X-Band Leistungsverstärker MMIC mit 18dB Verstärkerung und 25% PAE
: Bessemoulin, A.; Massler, H.; Quay, R.; Ramberger, S.; Schlechtweg, M.


Institute of Electrical and Electronics Engineers -IEEE-:
24st Annual GaAs IC Symposium 2002. Technical digest : Monterey, California, October 20 - 23, 2002
Piscataway, NJ: IEEE, 2002
ISBN: 0-7803-7447-9
GaAs IC Symposium <24, 2002, Monterey/Calif.>
Fraunhofer IAF ()
high power; amplifier; Leistungsverstärker; HPA; PAE; x-Band; coplanar; circuit; Koplanarschaltung; chip size reduction; Chipflächenreduzierung; double recess; Dopelter Recess; PHEMT

The performance of a compact coplanar (CPW) microwave monolithic integrated circuit (MMIC) amplifier with high output power in the X-band is presented. Based on our 0.3-µm gate length GaAs power PHEMT process on 4" wafer, this two-stage amplifier, having a chip size of 16 mm2, averages 4 Watts CW and 25-% PAE in the X-band, with more than 18-dB linear gain. Peak output powers of PB-1dB=36.3 dBm (4.3 Watts) and Psat of 36.9 dBm (4.9 Watt) at 10 GHz with a power added efficiency of 35 % were also measured. Compared to previously reported X-band coplanar HPA, this represents a chip size reduction of 20 %, comparable to the size of compact state-of-the-art microstrip PAs.