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Silicon quantum dot absorber layers for all-silicon tandem solar cells: Optical and electrical characterisation

: Löper, P.; Hartel, A.; Künle, M.; Hiller, D.; Janz, S.; Hermle, M.; Zacharias, M.; Glunz, S.W.

Volltext urn:nbn:de:0011-n-1435319 (379 KByte PDF)
MD5 Fingerprint: 204b60ba556575578c2f3bb5a2eb9c25
Erstellt am: 31.8.2012

Sinke, W. ; WIP - Renewable Energies, München; European Commission; UNESCO; World Council for Renewable Energy; International Photovoltaic Equipment Association:
24th European Photovoltaic Solar Energy Conference 2009. CD-ROM : The compiled State-of-the-Art of PV Solar Technology and Deployment. Proceedings of the International Conference held in Hamburg, 21-25 September 2009
München, 2009
ISBN: 3-936338-25-6
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <24, 2009, Hamburg>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Silicium Quantenpunkte

Silicon carbide thin films that incorporate silicon nanocrystals are investigated. The optical band gap of the films is controlled by the deposition and annealing conditions. The band gap of as-deposited films was varied between 2.1 eV and 3 eV. Si0.5C0.5 films were successfully doped in-situ with B2H6 and conductivities of 5·10-5 S/cm to 2·10-4 S/cm were obtained. Temperature dependent conductivity shows that the conductivity follows an Arrhenius relation for certain temperature regimes. However, the temperature dependence over a larger temperature range is not Arrhenius-like, which is in agreement with previous results.