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Photoluminescence topography of sulfur doped 2'' InP grown by the vertical gradient freeze technique

Photolumineszenztopographie an schwefeldotierten 2''VGF InP
 
: Sahr, U.; Mueller, G.; Grant, I.; Baeumler, M.; Jantz, W.

:

IEEE Electron Devices Society; IEEE Lasers and Electro-Optics Society:
IPRM, 14th Indium Phosphide and Related Materials Conference. Conference proceedings : May 12 - 16, 2002, Stockholm, Sweden
Piscataway: IEEE Operations Center, 2002
ISBN: 0-7803-7320-0
S.405-408
International Conference on Indium Phosphide and Related Materials (IPRM) <14, 2002, Stockholm>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
VGF InP:S substrat; photoluminescence topography; Photolumineszenztopographie; photoluminescence spectroscopy; Photolumineszenzspektroskopie; carrier concentration; Ladungsträgerkonzentration

Abstract
S-doped InP crystals were grown in a VGF furnace. The substrates, cut from the seed, middle and tail portions of the ingot, were investigated by Hall-measurement, photoluminescence spectroscopy and topography. The photoluminescence intensity across the wafer area is very homogeneous, with an average standard deviation of 6% only. The carrier concentration is measured by evaluating the position of the high-energy cut-off of the band-to-band luminescence. The optical data satisfactorily correlate with Hall measurements.

: http://publica.fraunhofer.de/dokumente/N-14350.html