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Electrical activation of implanted phosphorus ions in (0001)/(1120)-oriented 4H-SiC

Elektrische Aktivierung implantierter Phosphor-Ionen in (0001)/(11-20)-orintiertem 4H-Sic
: Schmid, F.; Laube, M.; Pensl, G.; Wagner, G.; Maier, M.

Yoshida, S.:
Silicon carbide and related materials 2001. Pt.1 : Proceedings of the International Conference on Silicon Carbide and Related Materials - 2001, Tsukuba, Japan, October 28 - November 2,2001
Zürich-Uetikon: Trans Tech Publications, 2002 (Materials Science Forum 389/393)
ISBN: 0-87849-894-X
International Conference on Silicon Carbide and Related Materials (ICSCRM) <2001, Tsukuba>
Fraunhofer IAF ()
4H-SiC; a-plane; a-Ebene; ion implantation; Ionenimplantation; phosphorus; Phosphor; Si-face; Si-Fläche

Two phosphorus (P) box-profiles (P1: [P]=2x10 (exp 18) cm-3, P2: [P]=2.4x10 (exp 20) cm-3) are generated by multiple implantation into (0001)- or (11 2 0)-oriented 4H-SiC epilayers. Hall effect investigations are conducted to determine whether the electrical activation of P-ions depends on the orientation of the epilayers and whether P-donor concentrations above 10 (exp 20) cm-3 can be reached.