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Reliability of metamorphic HEMTs for power applications

Zuverlässigkeit von metamorphen HEMTs für Leistungsanwendungen
: Dammann, M.; Benkhelifa, F.; Meng, M.; Jantz, W.


Microelectronics reliability 42 (2002), Nr.9-11, S.1569-1573
ISSN: 0026-2714
Fraunhofer IAF ()
reliability; Zuverlässigkeit; metamorph; HEMT; MHEMT; hot electron; heißer Ladungsträger; life time; Lebensdauer; power application; Leistungsanwendung; accelerated aging; beschleunigter Alterungstest; ohmic contact degradation; Ohmsche Kontakt Degradation; power application

The reliability of InAlAs/InGaAs HEMTs grown on GaAs substrate with metamorphic buffer (MHEMT) designed for power applications has been investigated by accelerated lifetime tests. MHEMTs manufactured before and after fabrication technology modifications, aiming at improvements of the stability of the gate contact and the ohmic resistance, are compared. By combining biased MHEMT tests with high temperature storage tests of TLM structures fabricated on the same wafers, the effects of the process modifications can be evaluated separately. Due to the gate contact stabilization, the improved devices show almost no change of transconductance after a 300 h stress test at 4V bias and a channel temperature of 170°C.