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Lifetime studies on crystalline silicon thin-film material by photoluminescence imaging

: Kopp, F.; Rosenits, P.; Roth, T.; Schmich, E.; Reber, S.; Warta, W.

Volltext urn:nbn:de:0011-n-1433231 (375 KByte PDF)
MD5 Fingerprint: 1195d47f6aae73e51dc629744259c54f
Erstellt am: 31.8.2012

Sinke, W. ; WIP - Renewable Energies, München; European Commission; UNESCO; World Council for Renewable Energy; International Photovoltaic Equipment Association:
24th European Photovoltaic Solar Energy Conference 2009. CD-ROM : The compiled State-of-the-Art of PV Solar Technology and Deployment. Proceedings of the International Conference held in Hamburg, 21-25 September 2009
München, 2009
ISBN: 3-936338-25-6
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <24, 2009, Hamburg>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

In this paper it is demonstrated how photoluminescence imaging (PLI) can serve to qualitatively and quantitatively characterize the properties of an epitaxial silicon layer. In the first part a set of microelectronic-grade samples is characterized electrically by determining the epitaxial layer lifetime. In the second part a set of samples for photovoltaic application is studied. In this case the focus is on the possibilities for a qualitative analysis of the thickness inhomogeneity of the epitaxial layer.