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Impact of SiNx:H and Al2O3 surface passivation on interstitial iron concentration and carrier lifetime in mc-silicon wafers

: Habenicht, H.; Schubert, M.C.; Richter, A.; Warta, W.

Volltext urn:nbn:de:0011-n-1433091 (210 KByte PDF)
MD5 Fingerprint: 6daed9c9b6bcdc6b5248c67bce473881
Erstellt am: 18.8.2012

Sinke, W. ; WIP - Renewable Energies, München; European Commission; UNESCO; World Council for Renewable Energy; International Photovoltaic Equipment Association:
24th European Photovoltaic Solar Energy Conference 2009. CD-ROM : The compiled State-of-the-Art of PV Solar Technology and Deployment. Proceedings of the International Conference held in Hamburg, 21-25 September 2009
München, 2009
ISBN: 3-936338-25-6
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <24, 2009, Hamburg>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

In this study we investigate and compare the influence of two different surface passivation methods on the bulk properties. As passivation layers the widely used PECVD-SiNx:H and the recently developed Al2O3 passivation layer, deposited by atomic layer deposition (ALD), are investigated. Changes in the carrier lifetime due to the applied temperature (and additionally hydrogen-passivation in the case of SiN) were assessed and special interest was paid to the interstitial iron (Fei) concentration. We could show that H-passivation, coming from the hydrogen rich SiN layer, rises lifetimes, but does not alter the Fei concentration. Nevertheless, a reduction of Fei was observed which is only caused by a temperature-driven precipitation and is not influenced by the H-passivation.