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Development of crystalline silicon based metal wrap through (MWT) solar cells for low concentrator (2-30x) applications

: Fellmeth, T.; Fritz, S.; Menkö, M.; Mingirulli, N.; Glatthaar, M.; Clement, F.; Biro, D.; Preu, R.

Volltext urn:nbn:de:0011-n-1433008 (1.6 MByte PDF)
MD5 Fingerprint: 0a9b6205ebc7ff3d5ba0141c0fbdd2eb
Erstellt am: 15.8.2012

Sinke, W. ; WIP - Renewable Energies, München; European Commission; UNESCO; World Council for Renewable Energy; International Photovoltaic Equipment Association:
24th European Photovoltaic Solar Energy Conference 2009. CD-ROM : The compiled State-of-the-Art of PV Solar Technology and Deployment. Proceedings of the International Conference held in Hamburg, 21-25 September 2009
München, 2009
ISBN: 3-936338-25-6
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <24, 2009, Hamburg>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

One of the main barriers on the way to mass production of concentrator silicon solar cells is the lack of industrially feasible process sequences. Therefore, a concentrator silicon based Metal Wrap Through (CMWT) solar cell completely processed at the Fraunhofer ISE PhotoVoltaic Technology Evaluation Center (PV-TEC) is introduced. This means no clean room or photolithographic steps are necessary. Under one-sun conditions, a conversion efficiency of 18.6% could be reached which is so far the highest efficiency reported for a MWT silicon solar cell. The highest efficiency achieved was 19.5% at 6 suns and even 18.1% at 23 suns. The series resistance as major loss mechanism concentrator solar cells are suffering from is the main focus in this work. Concerning this matter an investigation of the Light induced Plating (LiP) step and furthermore a detailed analysis of the contributions to the series resistance is presented. A simulation tool containing an analytical series resistance model has been developed and a 2-diode-model was added providing the calculation of the efficiency and fill factor dependent on the concentration at given parameters.