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Simulation of TaNx deposition by reactive PVD

: Wolf, H.; Streiter, R.; Friedemann, M.; Belsky, P.; Bakaeva, O.; Letz, T.; Gessner, T.


Microelectronic engineering 87 (2010), Nr.10, S.1907-1913
ISSN: 0167-9317
Fraunhofer ENAS ()

The subject of this paper is the extension of the simulation tool T2 for the application to Reactive Physical Vapor Deposition. The implemented models are briefly described and applied to the deposition of TaNx barriers. The influence of the nitrogen flow and the substrate bias on the deposition rate, the thickness uniformity, and the film composition is discussed.