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Simulation of TaNx deposition by reactive PVD

: Wolf, H.; Streiter, R.; Friedemann, M.; Belsky, P.; Bakaeva, O.; Letz, T.; Gessner, T.

DOI: 10.1016/j.mee.2009.11.044

	Microelectronic engineering 87 (2010), Nr.10, S.1907-1913 ISSN: 0167-9317

	Englisch
	Zeitschriftenaufsatz
	Fraunhofer ENAS ()

Abstract
The subject of this paper is the extension of the simulation tool T2 for the application to Reactive Physical Vapor Deposition. The implemented models are briefly described and applied to the deposition of TaNx barriers. The influence of the nitrogen flow and the substrate bias on the deposition rate, the thickness uniformity, and the film composition is discussed.

: http://publica.fraunhofer.de/dokumente/N-142836.html