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Submicron resolution carrier lifetime analysis in silicon with Fano resonances

: Gundel, P.; Schubert, M.C.; Heinz, F.D.; Benick, J.; Zizak, I.; Warta, W.


Physica status solidi. Rapid research letters 4 (2010), Nr.7, S.160-162
ISSN: 1862-6254
ISSN: 1862-6270
Fraunhofer ISE ()
Siliciummaterialcharakterisierung; Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Messtechnik und Produktionskontrolle; Industrielle und neuartige Solarzellenstrukturen

Defect rich regions in multicrystalline silicon are by Raman spectroscopy at high and low injection levels. analyzing the Fano type asymmetny and the spectral of the first order Raman peak crucial properties such as combination lifetime, doping density and -stress can be tracted simultaneously. Due to the small wavelength of the excitation laser thhe spatial resolution of these measurements is significantly below 1 mu m which gives new insight into thhe impact of defects on the carrier recombination lifetime. The results are evaluated by comparing them to micro-photoluminescence and synchrotron X-ray fluorescence measurements.