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Optical confinement for thin-film solar cells by gaseous HCL etching

: Drießen, M.; Schmich, E.; Janz, S.; Reber, S.

Volltext urn:nbn:de:0011-n-1427776 (208 KByte PDF)
MD5 Fingerprint: ea3c4a5780fca62acbb6e263f6900fe2
Erstellt am: 31.8.2012

Sinke, W. ; WIP - Renewable Energies, München; European Commission; UNESCO; World Council for Renewable Energy; International Photovoltaic Equipment Association:
24th European Photovoltaic Solar Energy Conference 2009. CD-ROM : The compiled State-of-the-Art of PV Solar Technology and Deployment. Proceedings of the International Conference held in Hamburg, 21-25 September 2009
München, 2009
ISBN: 3-936338-25-6
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <24, 2009, Hamburg>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

Chemical vapour etching (CVE) with gaseous hydrochloride (HCl) at elevated temperatures offers the possibility to achieve either plane or structured surfaces depending on the temperature and the fraction of HCl in the carrier gas hydrogen. Therefore some process steps during the fabrication of a crystalline silicon thin film solar cell might be displaced or added by HCl etching. The removal of saw damage is possible and leads to a fraction of diffuse reflectance down to 18 % for the best actual process. In case of a solar cell based on the epitaxial waferequivalent pores can be generated by etching of deep pits and subsequent epitaxial deposition of the active silicon layer. Those pores can act as a reflector and lead to an increase of the optical path length of incoming light through the active layer, however the number of generated pores still has to be increased. Additionally facets with shallow gradients can be formed. A front side texturing consisting of a combination of different etching steps might be possible in future.