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Gettering variation and lifetime characterization on intentionally iron, nickel and chromium contaminated multicrystalline silicon wafers

: Blazek, M.; Kwapil, W.; Schön, J.; Warta, W.; Coletti, G.

Volltext urn:nbn:de:0011-n-1427720 (433 KByte PDF)
MD5 Fingerprint: 8f0a10a3d952ab419d5a66795be972be
Erstellt am: 17.8.2012

Sinke, W. ; WIP - Renewable Energies, München; European Commission; UNESCO; World Council for Renewable Energy; International Photovoltaic Equipment Association:
24th European Photovoltaic Solar Energy Conference 2009. CD-ROM : The compiled State-of-the-Art of PV Solar Technology and Deployment. Proceedings of the International Conference held in Hamburg, 21-25 September 2009
München, 2009
ISBN: 3-936338-25-6
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <24, 2009, Hamburg>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

Gettering experiments have been performed using multi-crystalline silicon wafers from highly contaminated feedstock. The transition metal contaminants under investigation were iron, nickel and chromium. A series of gettering variations was accomplished including internal gettering, aluminum gettering and phosphorus diffusion gettering in combination with three different temperature-time profiles. Lifetime characterization by the means of MWPCD and QSSPC showed that a longer tail of moderate temperature after a high temperature firing step might be useful to enhance carrier lifetimes of highly contaminated material.