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Influence of annealing temperature and measurement ambient on TFTs based on gas phase synthesized ZnO nanoparticles

Der Einfluss von Ausheiltemperatur und Messatmosphäre auf TFTs basierend auf gasphasensynthetisierten ZnO Nanopartikeln
: Walther, S.; Schäfer, S.; Jank, M.P.M.; Thiem, H.; Peukert, W.; Ryssel, H.; Frey, L.


Microelectronic engineering 87 (2010), Nr.11, S.2312-2316
ISSN: 0167-9317
Fraunhofer IISB ()
gedruckte Elektronik; Nanopartikel; TFT; Dünnfilmtransistor; printed electronics; nanoparticle; thin film transistor

In this paper, we report on the applicability of gas phase synthesized ZnO nanoparticles for printed electronics. Electrical characteristics of thin film transistors with an active layer based on ZnO nanoparticle dispersions are presented. A low charge carrier mobility and a low Ion/Ioff ratio are found for the devices when measured in nitrogen atmosphere. The mobility is limited by the rough interface between semiconductor and dielectric. Additional electrical measurements in dry air reveal a dependency of the Ion/Ioff ratio on surface states of the ZnO particles. It is shown that adsorption of oxygen on ZnO nanoparticles leads to improved transistor characteristics.