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Investigation of the production and technical use of InSb single crystals periodically doped by means of the Peltier effect

 
: Nolting, P.

Journal of Crystal Growth 37 (1977), Nr.3, S.289-92
ISSN: 0022-0248
Deutsch
Zeitschriftenaufsatz
Fraunhofer HHI ()
crystal growth from melt; helicons; iii-v semiconductors; indium antimonide; peltier effect; semiconductor doping; semiconductor growth; thermoelectric effects in semiconductors and insulators; insb single crystals; periodically doped insb crystals; peltier effect modulation; czochralski process; segregation constant; helicon diagnostics; wave propagation process; periodic structure; iii-v semiconductor

Abstract
The production of periodically doped InSb crystals by Peltier effect modulation was studied for the Czochralski process. Some experimental observations, which characterize the modulation of the segregation constant, are discussed qualitatively An examination of the crystals by helicon diagnostics shows no influence on the wave propagation process by the periodic structure. Therefore the change in notation produced by Peltier effect is too small to be used for amplification or generation of microwaves.

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