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Electro-optical light modulation in InGaAsP/InP double heterostructure diodes

: Bach, H.G.; Krauser, J.; Nolting, H.P.; Logan, R.A.; Reinhart, F.K.


Applied Physics Letters 42 (1983), Nr.8, S.692-4
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
Fraunhofer HHI ()
electro-optical devices; gallium arsenide; iii-v semiconductors; indium compounds; integrated optics; optical modulation; optical waveguides; semiconductor diodes; quadratic electrooptical light modulation; linear electrooptic coefficient; InGaAsP/InP double heterostructure diodes; double heterostructure waveguides; p-n junction; electroabsorption

The linear electro-optic coefficient r41 was determined in quarternary double heterostructure waveguides containing a p-n junction. Over the limited range of measurements, it is independent of wavelength and composition with a value r41=-1.4*10-10 cm/V. A strong quadratic electro-optic effect has been identified for the first time, which strongly depends on the band gap and photon energy as does the associated electroabsorption effect.