Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Electro-optical light modulation in InGaAsP/InP double heterostructure diodes



Applied Physics Letters 42 (1983), Nr.8, S.692-4
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer HHI ()
electro-optical devices; gallium arsenide; iii-v semiconductors; indium compounds; integrated optics; optical modulation; optical waveguides; semiconductor diodes; quadratic electrooptical light modulation; linear electrooptic coefficient; InGaAsP/InP double heterostructure diodes; double heterostructure waveguides; p-n junction; electroabsorption

The linear electro-optic coefficient r41 was determined in quarternary double heterostructure waveguides containing a p-n junction. Over the limited range of measurements, it is independent of wavelength and composition with a value r41=-1.4*10-10 cm/V. A strong quadratic electro-optic effect has been identified for the first time, which strongly depends on the band gap and photon energy as does the associated electroabsorption effect.