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1983
Journal Article
Titel
Electro-optical light modulation in InGaAsP/InP double heterostructure diodes
Abstract
The linear electro-optic coefficient r41 was determined in quarternary double heterostructure waveguides containing a p-n junction. Over the limited range of measurements, it is independent of wavelength and composition with a value r41=-1.4*10-10 cm/V. A strong quadratic electro-optic effect has been identified for the first time, which strongly depends on the band gap and photon energy as does the associated electroabsorption effect.
Tags
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electro-optical devices
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gallium arsenide
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iii-v semiconductors
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indium compounds
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integrated optics
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optical modulation
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optical waveguides
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semiconductor diodes
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quadratic electrooptical light modulation
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linear electrooptic coefficient
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InGaAsP/InP double heterostructure diodes
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double heterostructure waveguides
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p-n junction
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electroabsorption