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Light guiding and electrooptical modulation in InGaAsP/InP double heterostructures

: Albrecht, P.; Bach, H.G.; Bornholdt, C.; Doldissen, W.; Franke, D.; Grote, N.; Krauser, J.; Niggebrugge, U.; Nolting, H.P.; Schlak, M.; Tiedke, I.; Logan, R.A.; Reinhart, F.K.

Second European Conference on Integrated Optics : Post deadline paper.
Florenz, 1983
European Conference on Integrated Optics (ECIO) <2, 1983, Florenz>
Fraunhofer HHI ()
electro-optical devices; gallium arsenide; iii-v semiconductors; indium compounds; integrated optics; kerr electro-optical effect; optical modulation; optical waveguides; pockels effect; InGaAsP-InP double heterostructures; light guiding; iii-v semiconductor; linear electrooptic effect; quadratic electrooptic effect; franz keldysh effect; fabrication; long rig-waveguides; low loss; q-layers; kerr effect; bandgap; photon energy; electroabsorption

The fabrication of long rig-waveguides in the InGaAsP system with low loss suitable for integrated optics has been demonstrated. Furthermore, the authors showed, for the first time, electrooptical light modulation in Q-layers and determined the linear (Pockels effect) and quadratic (Kerr Effect) electrooptic effect. The linear electrooptic effect, r41, is independent of wavelength and composition with a value of r41=-1.4*10-10 cm/V over the limited range of measurement, which is extended in respect to earlier experiments. A strong quadratic electrooptic effect has been identified, which strongly depends on the bandgap and photon energy, as does the associated electroabsorption (Franz-Keldysh) effect.