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A new open diffusion technique using evaporated Zn3P2 and its application to a lateral p-n-p transistor

: Schmitt, F.; Su, L.M.; Franke, D.; Kaumanns, R.

IEEE transactions on electron devices ED-31 (1984), Nr.8, S.1083-5
ISSN: 0018-9383
Fraunhofer HHI ()
bipolar transistors; diffusion in solids; gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; p-n heterojunctions; vacuum deposited coatings; zinc compounds; vacuum deposited film; iii-v semiconductor; open diffusion technique; zn3p2 layer; al2o3 layer; zn diffusion; n-InP single crystals; diffusion profiles; p+-p--n junctions; abrupt p+-n junctions; InGaAsP/InP lateral p-n-p transistor

Describes an open diffusion technique with a thin vacuum-deposited Zn3P2 layer covered by an Al2O3 layer, Zn diffusion in (100) n-InP single crystals by this techniques was studied and degradation-free surfaces were obtained. The diffusion profiles were measured. With high-temperature diffusion, p+-p--n junctions were obtained; at lower temperature, abrupt p+-n junctions were found. A planar diffused InGaAsP/InP lateral p-n-p transistor was produced using this technique.