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1985
Journal Article
Titel
An InGaAsP/InP double-heterojunction bipolar transistor for monolithic integration with a 1.5- mu m laser diode
Abstract
A double-heterostructure InGaAsP/InP bipolar transistor is described which comprises a CdO film as a wide-gap emitter made by sputter deposition. A current gain as high as 40 has been achieved. The transistor can also be operated in an inverted mode with the CdO layer acting as collector. The main feature of this transistor is the structural compatibility with a 1.5- mu m double heterojunction (DH) laser allowing for monolithic integration.
Language
English