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NpnN double-heterojunction bipolar transistor on InGaAsP/InP

: Su, L.M.; Grote, N.; Kaumanns, R.; Schroeter, H.


Applied Physics Letters 47 (1985), Nr.1, S.28-30
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
Fraunhofer HHI ()
bipolar transistors; gallium arsenide; iii-v semiconductors; indium compounds; semiconductors; n p n n double-heterojunction bipolar transistor; InGaAsp/InP; current gains; p+-InGaAs/ n-InP base/collector junction; gain reduction; electron repelling effect; conduction-band spike; thin n-InGaAs transition layer; ternary base; InP wide-gap collector; n n double-layer collector structure; current/voltage characteristics

Double-heterojunction bipolar transistors have been fabricated on InGaAs(P)/InP with current gains of up to 200. Transistors with a p+-InGaAs/N-InP base/collector junction exhibited drastic gain reduction at low collector bias voltages which is ascribed to the electron repelling effect of the conduction-band spike formed at the collector heterojunction. To overcome this complication a thin n-InGaAs transition layer was inserted between the ternary base and the InP wide-gap collector. The resulting nN double-layer collector structure leads to excellent current/voltage characteristics.