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A novel npn InGaAs bipolar transistor with a wide gap cadmium oxide (CdO) emitter

: Su, L.M.; Grote, N.; Bach, H.G.; Doldissen, W.; Rosenzweig, M.

Cremoux, B. de:
Gallium Arsenide and related compounds : Invited and contributed papers from the Eleventh International Symposium on Gallium Arsenide and Related Compounds held in Biarritz, France, on 26-28 September 1984
Bristol: Hilger, 1985 (Institute of Physics - Conference Series 74)
ISBN: 0-85498-165-9
International Symposium on Gallium Arsenide and Related Compounds <11, 1984, Biarritz>
Fraunhofer HHI ()
bipolar transistors; cadmium compounds; gallium arsenide; iii-v semiconductors; indium compounds; phototransistors; semiconductor; wide gap CdO film emitter; npn InGaAs bipolar transistor; phototransistor; emitter contact resistance; refractive index; antireflective window; current gain; emitter-collector breakdown voltage; hfe-ic characteristic; dark current; i-v characteristic; spectral responses

A CdO film was deposited on an InGaAs pn junction to form an npn bipolar transistor, which can be used also as a phototransistor. The high conductivity of CdO ( sigma =5*103/ Omega cm) reduces the emitter contact resistance and what a refractive index of n equivalent to 2.2 at 1.15 mu m wavelength the transparent film can serve as an antireflective window. The processing of the transistor is described. A current gain of hfe=10 (VCE=3V, Ic=1mA) and an emitter-collector breakdown voltage of VCEO=6V were obtained.