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1985
Conference Paper
Titel
A novel npn InGaAs bipolar transistor with a wide gap cadmium oxide (CdO) emitter
Abstract
A CdO film was deposited on an InGaAs pn junction to form an npn bipolar transistor, which can be used also as a phototransistor. The high conductivity of CdO ( sigma =5*103/ Omega cm) reduces the emitter contact resistance and what a refractive index of n equivalent to 2.2 at 1.15 mu m wavelength the transparent film can serve as an antireflective window. The processing of the transistor is described. A current gain of hfe=10 (VCE=3V, Ic=1mA) and an emitter-collector breakdown voltage of VCEO=6V were obtained.
Language
English
Tags
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bipolar transistors
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cadmium compounds
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gallium arsenide
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iii-v semiconductors
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indium compounds
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phototransistors
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semiconductor
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wide gap CdO film emitter
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npn InGaAs bipolar transistor
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phototransistor
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emitter contact resistance
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refractive index
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antireflective window
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current gain
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emitter-collector breakdown voltage
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hfe-ic characteristic
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dark current
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i-v characteristic
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spectral responses