Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Homogeneous linewidth and linewidth enhancement factor for a GaAs semiconductor laser

: Sugimura, A.; Patzak, E.; Meissner, P.


Journal of Physics. D. Applied Physics 19 (1986), Nr.1, S.7-16
ISSN: 0022-3727
ISSN: 1361-6463
Fraunhofer HHI ()
electron-phonon interactions; gallium arsenide; iii-v semiconductors; semiconductor junction lasers; electron electron interactions; polarisation relaxation; linewidth enhancement factor; GaAs semiconductor laser; homogeneous linewidth; gain coefficient; carrier density

The homogeneous linewidth and the linewidth enhancement factor alpha for a room-temperature GaAs laser are studied, calculating the time constant for the relaxation of the polarisation. The homogeneous linewidth obtained, arising from electron-electron and electron-phonon interactions, is of the order of several meV. It depends on carrier density and photon energy. The gain coefficient and the alpha -parameter are calculated using this homogeneous linewidth. The value of alpha -depends strongly on the photon energy, ranging from two to eight. Its value at maximum-gain wavelength becomes smaller for conditions of higher carrier density.