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Reactive ion beam etching of InP with N2 and N2/O2 mixtures

: Katzschner, W.; Niggebrügge, U.; Löffler, R.; Schroeter-Janssen, H.


Applied Physics Letters 48 (1986), Nr.3, S.230-232
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
Fraunhofer HHI ()
iii-v semiconductors; indium compounds; ion beam effects; semiconductor technology; sputter etching; grating structure fabrication; semiconductor; ion incidence angle dependence; ion energy dependence; ion beam current density dependence; InP; reactive ion beam etching; N2; N2/O2 mixtures; high quality surfaces; cone formation; etching rates; Ni; Ti; Al; Si; photoresist; AZ4210; MP15

A reactive ion beam etching process (RIBE) of InP with N2 and N2/O2 mixtures is described. The application of N2 of N2/O2 ion beams to InP results in high quality surfaces with virtual elimination of cone formation. The influence of the process parameters ion incidence angle, ion energy, ion beam current density, and N2/O2 ratio on etching rates is given for InP, Ni, Ti, Al, Si, and two types of photoresist (AZ4210, MP15). N2 RIBE has been used for the fabrication of grating structures with lambda =2400 AA periodicity. The gratings have been overgrown by liquid phase epitaxy without any degradation of the initial shape of the structure.