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A novel process for reactive ion etching on InP, using CH4/H2

 
: Niggebrugge, U.; Klug, M.; Garus, G.

Institute of Physics, Bristol:
Gallium arsenide and related compounds 1985. Proceedings
London, 1986 (Institute of Physics - Conference Series 79)
ISBN: 0-85498-170-5
S.367-372
International Symposium on Gallium Arsenide and Related Compounds <12, 1985, Karuizawa>
Englisch
Konferenzbeitrag
Fraunhofer HHI ()
iii-v semiconductors; indium compounds; semiconductor technology; sputter etching; semiconductor; CH4/H2 mixture etching gases; reactive ion etching; InP; optimized process parameters; smooth bottom surface; vertical sidewalls; precise pattern transfer; deep etching

Abstract
A new process for RIE of InP is presented, employing mixtures of CH4 and H2 as etching gases. Thus problems of corrosion in the vacuum system are avoided. With optimized process parameters smooth bottom surface and almost vertical sidewalls are achieved. Masking layers of photoresist or SiO2 undergo a self-passivation during the process, allowing precise pattern transfer and deep etching. The etching mechanism is not yet fully understood; however, empirical observations emphasize the key role of chemical reactions.

: http://publica.fraunhofer.de/dokumente/N-14012.html