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Electro-optic modulators in GaInAsP/InP

: Krauser, J.; Albrecht, P.; Bornholdt, C.; Doldissen, W.; Niggebrugge, U.; Nolting, H.-P.; Schlak, M.

Pearsall, T. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.; Association Nationale de la Recherche Technique -ANRT-:
Optical fiber sources and detectors : 28-29 November 1985, Cannes, France
Bellingham/Wash.: SPIE, 1986 (Proceedings of SPIE 587)
ISBN: 0-89252-622-X
Conference "Optical Fiber Sources and Detectors" <1985, Cannes>
Fraunhofer HHI ()
electro-optical devices; gallium arsenide; iii-v semiconductors; indium compounds; integrated optics; optical losses; optical modulation; optical waveguides; electro optic modulators; design; semiconductor; phase modulators; directional coupler modulators; switches; fabrication; passive rib waveguides; p-n junction; high efficiency; GaInAsP-InP

The semiconductor material system InGaAsP on InP is being increasingly used for waveguide based electro-optic devices such as phase modulators, directional coupler modulators, and switches with the long term goal of opto-electronic monolithic integration. The authors have demonstrated the fabrication of long passive rib waveguides (RWG) with low optical losses (3dB/cm) in this material. Electro-optical light modulation was achieved employing a p-n junction. The linear, quadratic and cubic term of the electro-optic effect could be identified. Design rules for high efficiency modulators are proposed.