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Formation of p+(p-)n junctions in InP and their dependence on substrate concentration, time and temperature

: Schmitt, F.; Mahnkopfe, M.

Journal of Crystal Growth 83 (1987), Nr.2, S.261-267
ISSN: 0022-0248
NATO Workshop on Materials Aspects of Indium Phosphide <3, 1986, Harwichport/Mass.>
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer HHI ()
diffusion in solids; iii-v semiconductors; indium compounds; p-n homojunctions; semiconductor doping; zinc; time; temperature; diffusion mechanism; thermal degradation; simple empirical equations; activation energy; pre-exponential factor; diffusion constant; substrate doping concentration; inp; zn3p2; al2o3 layer

To investigate the diffusion mechanism in InP, Zn was diffused from a solid source of Zn3P2, which has been evaporated onto the surface of the samples and covered by an Al2O3 layer to prevent thermal degradation. This simple technique provides a degradation-free and reproducible diffusion process. The formation of p+p-n- and p+n(+) junctions and their dependence on substrate doping (3*1015 cm-3 to 1018 cm-3), time and temperature are studied. It is shown that for low-doped InP, the position of the p+p- and p-n junctions can be controlled independently by choosing an appropriate combination of time and temperature. Furthermore simple empirical equations are obtained for the activation energy and the pre-exponential factor of the diffusion constant as a function of the substrate doping concentration.