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Optoelektronisches Halbleiterbauelement und Verfahren zu seiner Herstellung

Method for manufacturing semiconductor heterostructures by way of molecular beam epitaxy, comprises placing a substrate into a first vacuum chamber, heating the substrate to a first temperature and generating a first epitaxial layer
 
: Köhler, K.; Manz, C.

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Frontpage ()

DE 102008064316 A: 20081220
DE 102008064316 A: 20081220
H01L0021
H01L0031
H01L0033
H01S0005
Deutsch
Patent, Elektronische Publikation
Fraunhofer IAF ()

Abstract
(A1) Die Erfindung betrifft ein Verfahren zur Herstellung von Halbleiterheterostrukturen mittels Molekularstrahlepitaxie, welches die folgenden Schritte enthaelt: Einbringen eines Substrates in eine erste Vakuumkammer, Aufheizen des Substrates auf eine erste Temperatur, Erzeugen der ersten epitaktischen Schicht, wobei die Schicht eine erste Verbindung aus einer binaeren, ternaeren oder quaternaeren Verbindung von Elementen der III. und V. Hauptgruppe enthaelt und aus einem Molekularstrahl abgeschieden wird, Abkuehlen des Substrates auf eine zweite Temperatur, wobei der Molekularstrahl von Elementen der III. und V. Hauptgruppe unterbrochen wird, Aufheizen des Substrates auf eine dritte Temperatur und Erzeugen der zweiten epitaktischen Schicht, wobei die Schicht eine zweite Verbindung aus einer binaeren, ternaeren oder quaternaeren Verbindung von Elementen der III. und V. Hauptgruppe enthaelt und aus einem Molekularstrahl abgeschieden wird. Weiterhin betrifft die Erfindung Halbleiterbauelemente, welche mit dem genannten Verfahren erhaeltlich sind.

 

WO 2010070077 A1 UPAB: 20100714 NOVELTY - The method comprises placing a substrate into a first vacuum chamber, heating the substrate to a first temperature, generating a first epitaxial layer through deposition of molecular beam, where the layer comprises a first material that contains a binary, ternary or quaternary compound of elements of main group III and V, cooling the substrate to a second temperature, where the molecular beam is broken up by elements of main group III and V, heating the substrate to a third temperature and generating the second epitaxial layer through deposition of molecular beam. DETAILED DESCRIPTION - The method comprises placing a substrate into a first vacuum chamber, heating the substrate to a first temperature, generating a first epitaxial layer through deposition of molecular beam, where the layer comprises a first material that contains a binary, ternary or quaternary compound of elements of main group III and V, cooling the substrate to a second temperature, where the molecular beam is broken up by elements of main group III and V, heating the substrate to a third temperature and generating the second epitaxial layer through deposition of molecular beam, where the layer comprises a second material that contains a binary, ternary or quaternary compound of elements of main group III and V. The interruption of the molecular beam is carried out so that the substrate is subjected into a second vacuum chamber and an aperture is arranged between the substrate and the source of the molecular beam. The first and third temperature is greater than the second temperature. The emitted particle flow and/or the temperature of a source is changed and/or measured during the duration of the interruption of the molecular beam. A background pressure of less than 5x 10-9 mbar predominates in the first and/or the second vacuum chamber. Further layer is produced and consists of binary, ternary or quaternary compound of elements of main group III and V without the molecular beam of elements of III and V main group, where 50-300 layers are produced. A semiconductor laser or a photodetector is produced on the substrate. An INDEPENDENT CLAIM is included for an optoelectronic semiconductor device. USE - Method for manufacturing semiconductor heterostructures by way of molecular beam epitaxy useful for the production of optoelectronic semiconductor device such as transistors with high electron mobility, semiconductor lasers, light emitting diodes and/or photodiodes. ADVANTAGE - The method ensures simple and efficient manufacturing of semiconductor heterostructures with good quality.

: http://publica.fraunhofer.de/dokumente/N-139540.html