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GaN-based submicrometer HEMTs with lattice-matched InAlGaN barrier grown by MBE

: Lim, T.; Aidam, R.; Waltereit, P.; Henkel, T.; Quay, R.; Lozar, R.; Maier, T.; Kirste, L.; Ambacher, O.


IEEE Electron Device Letters 31 (2010), Nr.7, S.671-673
ISSN: 0741-3106
ISSN: 0193-8576
Fraunhofer IAF ()
HFET; InAlGaN; high electron mobility transistor; HEMT; lattice-matched; molecular beam epitaxy; MBE; quaternary; transistor

GaN-based high electron mobility transistors (HEMTs) with a nearly strain-free high-Al-content quaternary barrier and electron mobilities up to 1590 cm2/V · s have been grown on 4H-SiC using molecular beam epitaxy (MBE). The processed devices with 150-nm gate length exhibit a high dc performance with a maximum current density of 2.3 A/mm and an extrinsic transconductance up to 675 mS/mm that is among the highest values reported until now for any III-N transistor. We further present, to our knowledge, the first power measurements at 10 GHz of MBE-grown GaN HEMTs with nearly lattice-matched InAlGaN barrier achieving 47% power-added efficiency at 10 V and an output power density of 5.6 W/mm at 30-V bias.